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mrf6p27160hr6 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for cdma base station applications with frequencies from 2600 to 2700 mhz. suitable for wimax, wibro and multicarrier amplifier applications. to be used in class ab and class c for wll applications. ? typical single- carrier n - cdma performance: v dd = 28 volts, i dq = 1800 ma, p out = 35 watts avg., f = 2660 mhz, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13), channel bandwidth = 1.2288 mhz, par = 9.8 db @ 0.01% probability on ccdf. power gain ? 14.6 db drain efficiency ? 22.6% acpr @ 885 khz offset ? - 47.8 dbc in 30 khz bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2650 mhz, 160 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 c, 160 w cw case temperature 71 c, 35 w cw r jc 0.29 0.31 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6p27160h rev. 2, 12/2008 freescale semiconductor technical data mrf6p27160hr6 2600- 2700 mhz, 35 w avg., 28 v single n - cdma lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? freescale semiconductor, inc., 2005 - 2006, 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6p27160hr6 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (1) (v ds = 10 vdc, i d = 250 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (3) (v dd = 28 vdc, i d = 1800 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain- source on - voltage (1) (v gs = 10 vdc, i d = 2.2 adc) v ds(on) ? 0.21 0.3 vdc dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.8 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1800 ma, p out = 35 w avg. n - cdma, f = 2660 mhz, single- carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 885 khz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 13 14.6 16 db drain efficiency d 20 22.6 ? % adjacent channel power ratio acpr ? - 47.8 -45 dbc input return loss irl ? -13 -9 db 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in push - pull configuration.
mrf6p27160hr6 3 rf device data freescale semiconductor figure 1. mrf6p27160hr6 test circuit schematic z20, z21 0.160 x 0.760 microstrip z22, z23 0.240 x 0.150 microstrip z24, z25 0.170 x 0.420 microstrip z26, z27 0.260 x 0.080 microstrip z28, z29 0.040 x 0.258 microstrip z32 0.622 x 0.139 microstrip z33 0.346 x 0.081 microstrip z34, z35 0.801 x 0.050 microstrip z36, z37 0.460 x 0.095 microstrip pcb arlon gx - 0300- 5022, 0.030 , r = 2.5 z1 1.011 x 0.139 microstrip z2, z30 0.150 x 0.070 microstrip z3, z31 1.500 x 0.086 microstrip z4, z5 0.050 x 0.230 microstrip z6, z7 0.170 x 0.080 microstrip z8, z9 0.144 x 0.340 microstrip z10, z11 0.400 x 0.210 microstrip z12, z13 0.280 x 0.710 microstrip z14, z15 0.461 x 0.490 microstrip z16, z17 0.357 x 0.766 microstrip z18, z19 0.284 x 0.415 microstrip rf input c5 c7 + c3 v bias b1 z5 z7 z9 z13 c1 z4 z6 z8 z12 c2 z1 z2 dut c16 c17 c18 + v supply z17 z19 z21 z23 c13 rf output z32 z33 z3 z31 c6 + z35 c4 z11 z10 z15 z14 z37 c19 + c10 c12 + c8 v bias b2 c11 + z34 c9 z25 z27 z29 z16 z18 z20 z22 c14 z30 z24 z26 z28 c21 c22 c23 + v supply z36 c24 + r1 r2 c15 c20 table 5. mrf6p27160hr6 test circuit component designations and values part description part number manufacturer b1, b2 beads, surface mount 2743019447 fair- rite c1, c2 5.6 pf chip capacitors atc100b5r6ct500xt atc c3, c8, c15, c20 3.3 pf chip capacitors atc100b3r3ct500xt atc c4, c9 0.01 f chip capacitors c1825c103j1rac kemet c5, c10 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c6, c11 22 f, 25 v tantalum chip capacitors T491D226K025AT kemet c7, c12 47 f, 16 v tantalum chip capacitors t491d476k016at kemet c13, c14 4.3 pf chip capacitors atc100b4r3ct500xt atc c16, c17, c21, c22 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c18, c23 47 f, 50 v electrolytic capacitors emvy500ada470mf80g chemi- con c19, c24 330 f, 63 v electrolytic capacitors emvy630gtr331mmh0s chemi- con r1, r2 3.3 , 1/3 w chip resistors crcw121003r3fkea vishay
4 rf device data freescale semiconductor mrf6p27160hr6 figure 2. mrf6p27160hr6 test circuit component layout - + - + cut out area mrf6p27160h rev 5 b1 c7 c6 c5* c3 r1 c4* c1 c2 b2 c9* c10* c8 r2 c12 c11 c17 c16 c15 c19 c18 c13 c14 c20 c21 c22 c23 c24 *stacked
mrf6p27160hr6 5 rf device data freescale semiconductor typical characteristics 2700 2600 2690 2680 2670 2660 2650 2620 2610 2630 2640 ?15 ?11 ?12 ?13 ?14 ?16 ?14 ?10 ?11 ?12 ?13 ?15 irl, input return loss (db) acpr (dbc), alt1 (dbc) g ps , power gain (db) g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) 2700 2600 g ps acpr f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 35 watts avg. 2690 2680 2670 2660 2650 2620 2610 16 15.8 ?65 24 22 ?40 ?50 ?55 irl g ps f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 70 watts avg. 15.2 15.1 ?60 35 31 ?30 ?35 ?45 ?55 figure 5. two - tone power gain versus output power figure 6. third order intermodulation distortion versus output power 100 12 17 0.1 i dq = 2700 ma 2250 ma p out , output power (watts) pep 16 15 14 10 400 ?30 1 i dq = 900 ma p out , output power (watts) pep 100 ?40 ?50 ?60 10 d , drain efficiency (%) d d , drain efficiency (%) g ps , power gain (db) intermodulation distortion (dbc) imd, third order 15.4 15 14.6 14.2 14 v dd = 28 vdc, p out = 35 w (avg.), i dq = 1800 ma, n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 14.9 14.7 14.5 14.3 14 13 900 ma ?20 1800 ma 14.4 14.8 15.2 15.6 ?60 ?45 20 15 14.8 14.6 14.4 33 ?40 ?50 d acpr v dd = 28 vdc, f1 = 2643.75 mhz, f2 = 2646.25 mhz two?tone measurements, 2.5 mhz tone spacing 1350 ma 2630 2640 irl alt1 14.2 14.1 ?10 alt1 v dd = 28 vdc, p out = 70 w (avg.), i dq = 1800 ma, n?cdma is?95 pilot, sync, paging, traffic codes 8 through 13 1 1800 ma 1350 ma 0.1 v dd = 28 vdc, f1 = 2643.75 mhz, f2 = 2646.25 mhz two?tone measurements, 2.5 mhz tone spacing 2250 ma 2700 ma 23 21 34 32 30 300
6 rf device data freescale semiconductor mrf6p27160hr6 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 ?60 ?10 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 160 w (pep), i dq = 1800 ma two?tone measurements (f1 + f2)/2 = center frequency of 2645 mhz 5th order 3rd order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 8. pulsed cw output power versus input power 42 58 p3db = 54.32 dbm (270.33 w) p in , input power (dbm) v dd = 28 vdc, i dq = 1800 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2645 mhz 56 54 52 50 36 38 40 actual ideal p1db = 53.64 dbm (231.15 w) 57 34 p out , output power (dbm) acpr (dbc), alt1 (dbc) figure 9. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0 ?70 p out , output power (watts) avg. w?cdma 35 ?35 25 20 ?45 15 ?50 5 ?60 1 10 100 ?55 10 d , drain efficiency (%), g ps , power gain (db) ?65 d g ps 400 ?5 20 0 50 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1800 ma f = 2645 mhz 10 15 5 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw v dd = 24 v g ps , power gain (db) 300 10 16 60 15 11 120 12 14 32 v i dq = 1800 ma f = 2645 mhz 0 55 53 51 35 37 39 41 30 ?40 alt1 v dd = 28 vdc, i dq = 1800 ma, f = 2645 mhz single?carrier n?cdma, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 0 40 13 180 240 acpr 0.1 1 100 10 28 v
mrf6p27160hr6 7 rf device data freescale semiconductor typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 35 w avg., and d = 22.6%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 n - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 13. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 probability (%) is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. alt1 measured in 12.5 khz bandwidth @ 1.25 m hz offset. par = 9.8 db @ 0.01% probability on ccdf. . . . . . . .. . . . . . .. . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . ... . . .. . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. . . .. . . . . . . . . . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .. . . . . . . .... . . . . . . . ... . . . ... .. .. . .. . .. . . . . . . . . ... . . . . ... . . . . . . . . . . .. ... . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... ... . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . .. .. .. ... . . . . . .. ... . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . .. . .. ... . . . . . .... . . . . . . . . .. . . . . . . . . . . . . . . . . . . ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr in 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 14. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?alt1 in 12.5 khz integrated bw +alt1 in 12.5 khz integrated bw
8 rf device data freescale semiconductor mrf6p27160hr6 figure 15. series equivalent source and load impedance f mhz z source z load 2600 2610 2620 5.24 + j2.46 5.71 + j1.59 5.69 + j2.04 6.90 + j0.61 6.85 + j0.63 6.76 + j0.59 v dd = 28 vdc, i dq = 1800 ma, p out = 35 w avg. 2630 2640 5.45 + j1.42 5.62 + j1.48 6.50 + j0.59 6.13 + j0.56 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + 2645 2650 5.31 + j1.58 5.38 + j1.49 5.95 + j0.69 5.81 + j0.83 2660 2670 5.45 + j2.09 5.24 + j1.81 5.61 + j1.15 5.69 + j1.48 2680 5.84 + j2.22 5.91 + j1.67 2690 2700 6.49 + j1.92 6.22 + j2.12 6.12 + j1.68 6.17 + j1.60 z o = 10 z load f = 2600 mhz z source f = 2700 mhz f = 2600 mhz f = 2700 mhz
mrf6p27160hr6 9 rf device data freescale semiconductor package dimensions case 375d - 05 issue e notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4 ni - 1230
10 rf device data freescale semiconductor mrf6p27160hr6 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 dec. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn13232, p. 1, 2 ? removed lower thermal resistance and low gold plating bullets from features section as functionality is standard, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table; related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , and added ?measured in functional test?, on characteristics table, p. 2 ? removed forward transconductance from on characteristics table as it no longer provided usable information, p. 2 ? changed ?z2, z31? to ?z2, z30? and ?z3, z30? to ?z3, z31? in z list for fig. 1, test circuit schematic, p. 3 ? updated part numbers in table 5, component designations and values, to latest rohs compliant part numbers, p. 3 ? adjusted scale for fig. 5, two - tone power gain versus output power, to better match the device?s capabilities, p. 5 ? removed lower voltage tests from fig. 11, power gain versus output power, due to fixed tuned fixture limitations, p. 6 ? replaced fig. 12, mttf versus junction temperature, with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 10
mrf6p27160hr6 11 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005 - 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6p27160h rev. 2, 12/2008

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